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Amorphous semiconductor mobility limits
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DOI：10.1016/j.jnoncrysol.2015.10.005.png)
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Abstract
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A physics-based model for electron and hole mobility in an amorphous semiconductor is developed to estimate the mobility limits of an amorphous semiconductor. The model involves band tail state trapping of a diffusive (Brownian motion) mobility and accounts for both drift- and diffusion-induced transport, as normally encountered in the operation of a thin-film transistor. Employing this model leads to a predicted maximum mobility of similar to 70 cm(2)V(-1)s(-1) (similar to 10 cm(2)V(-1)s(-1)) for electrons (holes). (C) 2015 Elsevier B.V. All rights reserved.
Keywords:
Amorphous semiconductor
Electronic transport
Thin-film transistor
Mobility
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