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An artificial neural network chip based on two-dimensional semiconductor

delete2022-02-01
delete31
PRE
AI
S
Shunli Ma
吴天祥 (Tianxiang Wu)
X
Xinyu Chen
王寅 (Yin Wang)
汤宏伟 cover
汤宏伟 (Hongwei Tang)
Y
Yuting Yao
王岩 cover
王岩 (Yan Wang)
Z
Ziyang Zhu
J
Jianan Deng
J
Jing Wan
Y
Ye Lü
孙正宗 cover
孙正宗 (Zhengzong Sun)
Z
Zihan Xu
A
Antoine Riaud
C
Chenjian Wu
D
David Wei Zhang
Y
Yang Chai
周鹏 cover
周鹏 (Peng Zhou)
J
Junyan Ren
W
Wenzhong Bao *
DOI:10.1016/j.scib.2021.10.005delete
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Abstract

Abstract

En 中文
Recently, research on two-dimensional (2D) semiconductors has begun to translate from the fundamental investigation into rudimentary functional circuits. In this work, we unveil the first functional MoS2 artificial neural network (ANN) chip, including multiply-and-accumulate (MAC), memory and activation function circuits. Such MoS2 ANN chip is realized through fabricating 818 field-effect transistors (FETs) on a wafer-scale and high-homogeneity MoS2 film, with a gate-last process to realize top gate structured FETs. A 62-level simulation program with integrated circuit emphasis (SPICE) model is utilized to design and optimize our analog ANN circuits. To demonstrate a practical application, a tactile digit sensing recognition was demonstrated based on our ANN circuits. After training, the digit recognition rate exceeds 97%. Our work not only demonstrates the protentional of 2D semiconductors in wafer-scale integrated circuits, but also paves the way for its future application in AI computation. (C) 2021 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
Keywords:
MoS2
Two-dimensional (2D) FETs
Artificial neural network (ANN)
Multiply-and-accumulate (MAC)
Circuits

Journal

Science Bulletin cover
Science Bulletin
IF:
21.1
Papers:
5.0K
Citations:
2.2W

Organization

H
hong kong polytechnic university
Scholars:
3.0W
Papers: 4.1W
Citations: 921
F
fudan university
Scholars:
11.7W
Papers: 7.7W
Citations: 121
S
soochow university - china
Scholars:
5.2W
Papers: 3.6W
Citations: 82
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