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An Atomic Layer Etching (ALE)-Inspired Synthetic Protocol and Rapid Screening Process for ZnO Etching with β-Diketone Reagents
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DOI：10.1021/acs.inorgchem.6c01626.png)
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Abstract
En 中文
Atomic layer etching (ALE) is a top-down vapor-phase process that leads to self-limiting thinning of materials with an angstrom-level control. ALE has emerged as an attractive process for the wafer-scale fabrication of devices and materials with dimensional control on the nanoscale. The screening and optimization of molecular precursors for ALE processes are time- and resource-intensive. Herein, using ZnO and acetylacetone (Hacac) etching chemistry, we demonstrate a rapid thermogravimetric analysis (TGA) screening protocol with a series of β-diketones and validate its result by performing proof-of-concept ALE of ZnO with down-selected hexafluoroacetylacetone (Hhfac). The ALE process motivates the elaboration of a solvothermal and sonochemical protocol for the synthesis of Zn β-diketonate complexes under mild conditions and with excellent yields.
Keywords:
Atomic layer deposition
Deposition
Etching
Oxides
Thermogravimetric analysis
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4.7
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4.9W
Citations:
10.5W
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