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An Efficient Capacitance Extraction Method for Multichip Power Modules for EMI Analysis
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DOI：10.1109/TPEL.2025.3605996.png)
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Abstract
En 中文
Extracting parasitic capacitances in multichip power modules (MCPMs) is essential for reliable electromagnetic interference (EMI) analysis, especially in switching systems such as automotive inverters or converters. Such applications increasingly employ multibridge MCPMs—where multiple half-bridge cells are integrated and each bridge drives a different motor or load— making the characterization of capacitance more critical. Conventional approaches, such as curve tracers and transient fitting techniques, suffer from limitations including single-frequency measurement, a complex measurement setup, and the need for repeated tests under different bias conditions. These drawbacks limit their practicality for complex module-level characterization. This article proposes a generalized capacitance extraction method based on two-port S-parameter measurements. The proposed method enables modeling of both static and dynamic capacitances under various voltage biases, with minimal reconfiguration of terminal connections. Experimental validation using a commercial IGBT-based MCPM demonstrated that the proposed method significantly reduces setup complexity compared to conventional measurements. These results confirm that the method is effective for EMI analysis and modeling of advanced MCPMs.
Keywords:
Capacitance modeling
electromagnetic interference (EMI)
multichip power module (MCPM)
parasitic capacitance extraction
two-port S-parameter measurement
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6.5
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