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An Efficient Multiple Cell Upsets Tolerant Content-Addressable Memory
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DOI：10.1109/TC.2013.90.png)
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Abstract
En 中文
Multiple cell upsets (MCUs) become more and more problematic as the size of technology reaches or goes below 65 nm. The percentage of MCUs is reported significantly larger than that of single cell upsets (SCUs) in 20 nm technology. In SRAM and DRAM, MCUs are tackled by incorporating single-error correcting double-error detecting (SEC-DED) code and interleaved data columns. However, in content-addressable memory (CAM), column interleaving is not practically possible. A novel error correction code (ECC) scheme is proposed in this paper that will cater for ever-increasing MCUs. This work demonstrated that m parity bits are sufficient to cater for up to m-bit MCUs, with an understanding of the physical grouping of MCUs. The results showed that the proposed scheme requires 85% fewer parity bits compared to traditional Hamming distance based schemes.
Keywords:
Error correcting code
multiple cell upsets
soft-error rate
single-error correcting codes
parity bits
MCU confinement
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