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An enzymatic uric acid biosensor based on depletion and enhancement mode gallium nitride high electron mobility transistor
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DOI：10.1007/s10800-026-02478-3.png)
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Abstract
En 中文
In this work, an electrolyte gated AlGaN/GaN High Electron Mobility Transistor operating in Depletion mode and Enhancement mode was fabricated and employed successfully for electrochemical detection of uric acid sensing. The fabricated D-mode and E-mode HEMT devices exhibit high subthreshold slope of 144 mV/dec and 65 mV/dec along with high mobilities of 1240 cm(2)/V-s and 1400 cm(2)/V-s respectively. The devices were developed for evaluating drain current sensitivity and threshold voltage sensitivity in D-mode and E-Mode HEMT towards varying concentration of uric acid in the range of 0.1 mM to 1.0 mM. The proposed D-mode and E-mode HEMT offers high sensitivity of 325 mV/mM and 502 mV/mM towards uric acid detection at low operating voltage (V-DS = + 1 V) as complete gate area has been used for immobilizing biomolecules. The fabricated Electrolyte gated HEMT based sensing platform demonstrated a linear range of uric acid detection from 0.1 mM to 1 mM and a significantly low detection limit of 0.0572 mM and 0.0593 mM for D-HEMT and E-HEMT devices respectively along with remarkable stability of 20 weeks each. The validation of proposed biosensor was demonstrated in real serum samples indicating high feasibility of utilisation of the biosensor for practical applications.
Keywords:
Uric acid
AlGaN/GaN
HEMT
Depletion mode
Enhancement mode
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