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An Improved Monolithic GaN-Based Optocoupler With Annular Interdigitated Microstructures
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DOI：10.1109/LSENS.2025.3629077.png)
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Abstract
En 中文
Most commercial optocouplers integrate at least two optical elements, such as a light-emitting diode (LED) and a silicon photodiode (PD), which function as a simple signal switch. However, this hybrid approach not only makes high-level device integration difficult but also increases fabrication complexity and decreases reliability. To achieve a compact, high-performance optocoupler, this study integrates an LED and a PD on a sapphire-based gallium nitride (GaN) epi-wafer into a single chip using a monolithic microfabrication process. The design involves patterning an annular interdigitated microstructure in which the LED is surrounded by the PD. This method is suitable for batch fabrication and enhances coupling efficiency by enlarging the active area via the annular and interdigitated structures. Measurement results revealed that the proposed chip with annular interdigitated structures generated a photocurrent of 0.176 mA when an 80 mA current was applied to the emitting element. A high current transfer ratio of 0.23% was achieved, indicating excellent performance. In addition, the proposed optocoupler requires fewer PDs, thereby reducing chip size and simplifying packaging.
Keywords:
Light emitting diodes
Optical coupling
Optical device fabrication
Couplings
Substrates
Stimulated emission
Quantum well devices
Photodiodes
Optical switches
Phototransistors
Annular interdigitated microstructures
gallium nitride (GaN)-based optocoupler
monolithic microfabrication process
optical coupling efficiency