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An in-sensor humidity computing system for contactless human-computer interaction
DOI:10.1039/d3mh01734f.png)
Abstract
En 中文
Being capable of processing large amounts of redundant data and decreasing power consumption, in-sensor computing approaches play significant roles in neuromorphic computing and are attracting increasing interest in perceptual information processing. Herein, we proposed a high performance humidity-sensitive memristor based on a Ti/graphene oxide (GO)/HfOx/Pt structure and verified its potential for application in remote health management and contactless human-machine interfaces. Since GO possesses abundant hydrophilic groups (carbonyl, epoxide, and hydroxyl), the memristor shows a high humidity sensitivity, fast response, and wide response range. By utilizing the proton-modulated redox reaction, humidity exposure to the memristor induces a dynamic change in the switching between high and low resistance states, ensuring essential synaptic learning functions, such as paired-pulse facilitation, spike number-dependent plasticity, and spike amplitude-dependent plasticity. More importantly, based on the humidity-induced salient features originating from the abundant hydrophilic functional groups in GO, we have implemented a noncontact human-machine interface utilizing the respiratory mode in humans, demonstrating the potential of promoting health monitoring applications and effectively blocking virus transmission. In addition, the high recognition accuracy of contactless handwriting in a 5 x 5 array artificial neural network was successfully achieved, which is attributed to the excellent emulated synaptic behaviors. This study provides a feasible method to develop an excellent humidity-sensitive memristor for constructing efficient in-sensor computing for application in health management and contactless human-computer interaction. Respiratory detection and contactless human-computer interaction capacity is achieved by a humidity-sensitive memristor.
Keywords:
GENERATION
MEMRISTORS
DEVICES
FILM
Journal
IF:
10.7
Papers:
3.6K
Citations:
2.4W
Organization
Cited Papers
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Vertical 0.6 V sub-10 nm oxide-homojunction transistor gated by a silk fibroin/sodium alginate crosslinking hydrogel for pain-sensitization enhancement emulation
MATERIALS HORIZONS
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Dynamic Compensation Method for Humidity Sensors Based on Temperature and Humidity Decoupling
SENSORS
IF3.5

