.png){kind=icon}
.png){kind=icon}
Return
An insight into growth transition in AlN epitaxial films produced by metal-organic chemical vapour deposition at different growth temperatures
.png){kind=icon}
PRE
AI
M
Z
S
N
Y
Н
V
С
DOI：10.1016/j.spmi.2021.107095.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
This work demonstrates a clear picture growth transition of aluminium nitride (AlN) films from the three-dimensional (3D) to the two-dimensional (2D) regime on the sapphire substrate at various temperatures using metal-organic chemical vapour deposition (MOCVD) under low reactor pressure. The high deposition rate of large 3D AlN islands that isolated each other change to 2D growth mode with a smoother surface as temperature increases from 800 ?C to 1340 ?C. From x-ray diffraction measurement, the AlN (100), AlN (002), and AlN (101) planes exhibit strong peak monocrystalline AlN (002) films as the temperature increase. It found that the AlN film grew at 1100 ?C in the Frank-van der Merwe or 2D growth mode exhibits the highest crystalline quality with the threading dislocation density around 2.21 x 10(9) cm(-2). In addition, the lattice vibrational parameters of the AlN films at 1100 ?C shows the lowest phonon damping from IR spectra results. Thus, this study details the AlN epitaxial films growth transition, which is crucial for growing high crystalline quality AlN layer using the MOCVD technique.
Keywords:
III-V nitride
Aluminium nitride
Wide band gap semiconductors
Growth mode
UV LEDs
Journal
IF:
3.3
Papers:
6.8K
Citations:
9.0K
Organization
Cited Papers