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Analysis of short-circuit current suppression mediated by strategically optimized buffer layer thickness in heterojunction solar cells
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DOI：10.1039/D5YA00290G.png)
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Abstract
En 中文
The ever-growing global energy crisis and alarming environmental degradation have intensified the search for sustainable energy alternatives; with solar technology standing at the forefront of this revolution. Among cutting-edge photovoltaic (PV) advancements; heterojunction lead-free perovskite solar cells offer remarkable efficiency and environmental compatibility. This study presents a novel TiO2/SnS/BiFeO3/Spiro-OMeTAD configuration; analysed through COMSOL simulations in 1D to optimize performance. The results demonstrate a maximum efficiency of 23.59% at 1×1019 cm-3 donor-acceptor (DA) density; confirming the potential of this structure for high-performance applications. Furthermore; the fill factor peaks at 82.94% near 150 nm electron transport thickness; highlighting enhanced charge collection. The open-circuit voltage reaches a maximum of 1.057 V at an SnS layer thickness of 10 nm and decreases with further thickness increase; attributed to the impact on energy band alignment. The short-circuit current suppresses as the SnS layer’s thickness increase; attributed to the impact on layer’s resistance. Conversely; the short-circuit current density attaining a peak of 35.330 mA/cm2 at DA density of 1×1016 cm-3; due to improved charge carrier concentration at lower densities. These findings establish the feasibility of this heterojunction solar cell structure; providing a strong foundation for future experimental validation and optimization. This research paves the way for the development of next-generation; high-efficiency; and lead-free PV devices; promoting sustainable energy solutions.
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