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Annealing-Induced Defect Modulation and Functional Switching in ZnO Thin Films: DFT and Molecular Docking Analysis

delete2026-01-08
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PRE
AI
G
Gitanjali Kale
K
Ketankumar A. Ganure *
A
Anima Ghosh
S
S. G. Divakara
P
Premnath Dhanaraj
S
Sharanabasava V. Ganachari *
DOI:10.1007/s10904-025-04163-ydelete
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Abstract

Abstract

En 中文
ZnO thin films were deposited by the SILAR method onto glass substrates, and the influence of post-annealing on their structural, optical, and biological properties was systematically investigated. The as-deposited films exhibited a porous flower-like morphology with abundant oxygen vacancies, leading to high antibacterial activity with an 18 mm inhibition zone against Bacillus subtilis. Annealing converted the films into rod-like nanostructures with enhanced crystallinity (crystallite size: 18–22 nm) and optical transparency (> 82%), while significantly suppressing the antibacterial performance due to vacancy passivation. DFT calculations supported the observed trends with reduced mid-gap defect states and enhanced carrier delocalization in annealed films. Further, molecular docking using Glide XP has shown that only the defect-rich ZnO clusters form strong interactions with the bacterial protein 6RKS, unravelling the mechanistic basis for antimicrobial action. This work represents the first integrated evidence for linking oxygen-vacancy modulation to functional switching in ZnO thin films and provides guidelines for designing multifunctional oxide coatings.
Keywords:
ZnO thin films
SILAR
Oxygen vacancies
Defect passivation
Antibacterial activity
DFT–molecular docking

Journal

Journal of Inorganic and Organometallic Polymers and Materials cover
Journal of Inorganic and Organometallic Polymers and Materials
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