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Antiferroelectric domain modulation enables high-efficiency energy storage under low electric fields
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DOI：10.1016/j.actamat.2026.122323.png)
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Abstract
En 中文
Antiferroelectric (AFE) ceramics, characterized by their distinctive electric-field-induced phase transitions, are promising candidates for high-performance energy storage (ES) capacitors. Conventional strategies to enhance ES density typically rely on applying high electric fields (E-fields), which can compromise safety and diminish the intrinsic advantages of these materials. Developing AFE ceramics that achieve high recoverable ES density (Wrec), ES efficiency (η), and ES strength (Wrec/E) under low E-fields remains a critical challenge, yet it is essential for enabling safe, efficient, and practical dielectric ES devices. To address this limitation, Bi(Zn2/3Nb1/3)O3 was incorporated into Pb0.97La0.02Zr0.65Sn0.35O3 matrix to precisely engineer the AFE domain structure. This strategy created localized regions with extended modulation periods, enabling a synergistic optimization of phase-switching fields and polarization while simultaneously reducing the electric hysteresis associated with the phase transition. The optimized composition exhibits outstanding ES characteristics, achieving a Wrec/E of 30.4 μC/cm2, a Wrec 6.08 J/cm3, and an η of 87.22% under a modest E-field of 200 kV/cm, outperforming most recently reported dielectric ceramics. It also maintains remarkable frequency stability over the range of 10–100 Hz and demonstrates robust fatigue endurance for up to 104 cycles. These findings provide a viable approach for engineering PbZrO3-based ceramics that combine high ES performance with low E-fields operation.
Keywords:
Antiferroelectric ceramics
Energy storage
Domain modulation
Low electric fields
High efficiency
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