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Architectural engineering of reduced graphene oxide in BiVO4 photoanodes for enhanced photoelectrochemical performance
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DOI:10.1016/j.oceram.2026.101009.png)
Abstract
En 中文
• Architecture-dependent rGO integration improves BiVO4 PEC performance. • Surface rGO enhances interfacial charge extraction and photocurrent. • Buried rGO improves bulk charge separation and electron transport. • rGO placement governs stability and surface chemical evolution. • Spatially engineered rGO interfaces tune PEC charge-transfer pathways.
Keywords:
Bismuth vanadate
Reduced graphene oxide
Photoelectrochemistry
Water-splitting
Heterointerfaces
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