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Array-Level Characterization of Cryogenic RRAM
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DOI：10.1002/aelm.202500878.png)
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Abstract
En 中文
As emerging nonvolatile memory, resistive random-access memory (RRAM) holds great promise as a cryogenic memory solution for quantum computing systems. Although device-level cryogenic performance has been previously investigated, the scalability of these observations to RRAM array remains unaddressed. In this work, we report for the first time the comprehensive electrical characterization of a 1024-device HfO2-based RRAM array from 300 K room temperature to 4 K Helium temperature. Forming voltages increase significantly, with mean value rising from 3.91 V at 300 K to 7.11 V at 4 K, while set and reset voltages exhibit minor increase with average set voltage from 1.30 V at 300 K to 1.46 V at 4 K and average reset voltage from 1.75 V at 300 K to 1.86 V at 4 K. Endurance test demonstrates robust performance over 1 M cycle without degradation at 300, 77, and 4 K, respectively. Most notably, retention and relaxation characteristics are dramatically enhanced at 77 and 4 K. The devices also exhibited strong immunity against read disturb across the investigated temperatures. These findings establish HfO2-based RRAM array as high-performance cryogenic nonvolatile memory, and pave the way for practical integration of RRAM array in cryogenic quantum computing circuits.
Keywords:
cryogenic electronics
quantum computing
RRAM array
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