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Array-level MXene electrode flexible long-term-plasticity synaptic transistors
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AI
DOI：10.1039/D5MH00447K.png)
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Abstract
En 中文
Artificial nervous devices are expected to emulate the information processing methods of the human brain to achieve high-speed low-power computing. In these systems; synaptic transistors mimic the brain's input and storage mechanisms in response to external stimuli. Achieving a high-integration flexible synaptic transistor array with long-term plasticity and mass-production potential remains difficult due to structural and material limitations. In this work; novel array-level MXene-electrode flexible synaptic transistors have been realized with a long-term synaptic plasticity of over 1000 s without requiring a floating gate structure; electrolyte dielectrics; or ferroelectric materials. The Ti3C2Tx MXene electrodes provide protons from surface functional groups to fill the defects of the dielectric layer to achieve long-term synaptic plasticity. Furthermore; the method of patterning MXene electrodes enables both a high level of integration and array-level patterning; which had been highly challenging; especially on flexible substrates. Additionally; the matched work functions of MXene and semiconducting carbon nanotubes enable Ohmic contact for the metal–semiconductor junction. Furthermore; an MXene electrode flexible synaptic transistor (MEFST) array is made possible for next-generation 3D perception systems to achieve artificial neuromorphic computing and temporal fusion information storage based on long-term plasticity; leading to a high accuracy of 93.8% for recognising handwritten digits. Long-term plasticity allows rapid identification upon the reappearance of the same target without needing re-iteration. The MEFST array holds immense application potential for neuromorphic electronic skin; intelligent wearable electronics and edge computing.
Keywords:
flexible synaptic transistor
MXene electrode
long-term plasticity
neuromorphic computing
artificial nervous device
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10.7
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3.6K
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2.4W
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