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Assessing the effectiveness of strong oxide formers (Si, Al) in CrB2 thin films
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DOI：10.1016/j.scriptamat.2026.117378.png)
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Abstract
En 中文
This study assesses the effectiveness and interplay of different oxide formers in diboride-based coatings. Using a combinatorial high-throughput PVD approach, various hexagonal-structured ternary (Cr-Al-B, Cr-Si-B) and quaternary (Cr-Al-Si-B) films were explored. Cr0.34Si0.18B0.48 and Cr0.29Al0.18Si0.10B0.43 withstood oxidation up to 1300°C, unlike Cr-B and Cr-Al-B films. In diborides, Si super-effectively slows oxygen inward and chromium outward diffusion, and is crucial for oxidation protection, even in quaternary films. Approximately 8 at.% Si enhances Al-based scale formation, yielding a partly porous but adherent ∼300 nm scale after 1 h at 1200°C. For Cr-Si-B and Cr-Al-Si-B, oxidation leads to the formation of layered oxide scales consisting of a Si-O layer at the diboride surface, followed by Cr-O and, where Al is present, an outer undersense Al-O. Among the three oxide formers investigated, Si-derived scales (Si-O) appear most effective at 1200°C, despite limited solubility of Si in diborides, which leads to phase separations.
Keywords:
Si
Al
CrB2
oxidation resistance
high-temperature coatings
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5.6
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1.6W
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5.1W
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