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Asymmetric Ferroelectric Gated Reconfigurable WSe2 p–n Homojunction for In-Sensor Neuromorphic Vision Processing

delete2025-10-07
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PRE
AI
张翔 cover
张翔 (Xiang Zhang)
M
Mengshuang Chi *
S
Shidai Tian
J
Jizhou Zhang
T
Te Xu
A
Aifang Yu
D
Di Guo *
J
Junyi Zhai *
DOI:10.1002/adfm.202520019delete
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Abstract

Abstract

En 中文
The pursuit of energy-efficient, real-time artificial vision systems relies critically on advancing in-sensor computing hardware. Conventional p–n junctions—a cornerstone of optoelectronics—lack reconfigurable responses, while emerging reconfigurable alternatives typically require complex multi-gate control, hindering scalability. Here, an in-sensor artificial vision system based on a single-gated, reconfigurable WSe2 photodetector is presented with an asymmetric ferroelectric architecture. The device enables dynamic rectification tuning, achieving an ultrahigh rectification ratio (2 × 10⁶), near-ideal diode factor (n = 1.45), and reconfigurable bidirectional photoresponse, all controlled via a single gate. Leveraging this gate-tunable photoresponse, it demonstrates optoelectronic logic operations and multiple retinal-inspired in-sensor image preprocessing functions. By unifying reconfigurability with simple single-gate control, the design provides a foundation for energy-efficient, real-time vision systems in autonomous robotics and edge AI.
Keywords:
2D materials
ferroelectric gating
in-sensor computing
neuromorphic vision
reconfigurable p–n junction

Journal

Advanced Functional Materials cover
Advanced Functional Materials
IF:
19
Papers:
3.4W
Citations:
32.1W

Organization

B
Beijing Institute of Nanoenergy and Nanosystems
Scholars:
333
Papers: 126
Citations: 1.6W