.png){kind=icon}
.png){kind=icon}
Return
Atomic-scale interface engineering for two-dimensional materials based field-effect transistors
.png){kind=icon}
OA
AI
DOI：10.1002/smm2.1236.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Two-dimensional (2D) materials with free of dangling bonds have the potential to serve as ideal channel materials for the next generation of field-effect transistors (FETs) due to their atomic-thin and excellent electronic properties. However, the performance of 2D materials-based FETs is still dictated by the interface between electrodes/dielectrics and 2D materials. Several technical challenges such as improving device stability, reducing contact resistance, and advancing mobility need to be overcome. Herein, we focus on the effects of atomic-scale interface engineering on the contact resistance and dielectric layer for 2D FETs. Universal strategies we consider to achieve ohmic contact and develop high-quality, defect-free dielectric layers are provided. Furthermore, advancing the performance of 2D materials-based FETs and binding to silicon substrates are briefly analyzed.
Keywords:
dielectric layers
field-effect transistors
interface engineering
ohmic contact
two-dimensional materials
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
12.8
Papers:
380
Citations:
2.5K