.png){kind=icon}
Return
Atomically thin quantum light-emitting diodes
.png){kind=icon}
OA
AI
DOI：10.1038/ncomms12978.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
Keywords:
GRAPHENE
EMISSION
EMITTERS
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
15.7
Papers:
9.3W
Citations:
91.2W
Organization
Cited Papers
ShareSaveSolar-energy conversion and light emission in an atomic monolayer p-n diode.png)
NATURE NANOTECHNOLOGY
NATURE NANOTECHNOLOGYIF34.9
PREAI
ShareSaveStrain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2NANO LETTERSOAAI
NANO LETTERSIF9.1
OAAIShareSaveShareSaveOptoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenideNATURE NANOTECHNOLOGY
OAAI
NATURE NANOTECHNOLOGYIF34.9
OAAIShareSaveShareSaveShareSave
View more