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Automatic etch pit density analysis in multicrystalline silicon
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DOI：10.1016/j.commatsci.2020.109886.png)
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Abstract
En 中文
This publication contains a description and is published in combination with the source code for a tool capable of determining the etch pit density (EPD) on multicrystalline silicon image data. The algorithm is capable of classifying grain boundaries and polishing scratches and removes these structures from the analysis result. Included with the analysis code are methods for plotting EPD maps as well as relative EPD frequency. This is combined with a brief description of the experimental steps of wafer preparation and defect etching as well as a discussion of the analysis limitations.
Keywords:
Defect etching
Etch pit density
Dislocation density
Crystal defects
Multicrystalline silicon
mc-Si
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