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Balancing the piezoelectric coefficient and carrier concentration of Bi2WO6-x for ultrahigh piezocatalysis
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DOI:10.26599/JAC.2024.9220970.png)
Abstract
En 中文
Balancing the piezoelectric coefficient and carrier concentration of materials is key in the field of piezocatalysis. In this work, Bi2WO6 material with both piezoelectric and semiconductor properties was chosen as a model material. A onestep ethylene glycol (EG)-assisted solvothermal method was used to synthesize Bi2WO6 with oxygen vacancies. By controlling the solvothermal time and temperature, the oxygen vacancy concentration (COV) was regulated. As C OV increases, the piezoelectric coefficient decreases, the carrier concentration increases, and the hydrogen production rate first increases but then decreases. When C OV reaches 1.45x1012 spinsmg-1, the corresponding piezoelectric coefficient and carrier concentration are 13.9 pmV-1 and 2.90x1020 cm-3, respectively. The optimal hydrogen production rate per power of 2.21 mu molg-1h-1W-1 is equivalent to or even better than that of most reported piezocatalysts. The piezoelectric coefficient and carrier concentration, as two factors, jointly determine the piezocatalytic performance. The findings of this research can provide important and deep-seated insights for better piezocatalysts in the future.
Keywords:
piezocatalysis
oxygen vacancy
carrier concentration
piezoelectric coefficient
hydrogen evolution
Journal
IF:
16.6
Papers:
984
Citations:
9.9K
