A systematic and efficient sequential iterative global multi-objective optimization strategy for optimal design of rear seat in a passenger car

Xuan Zhou

doi:10.1177/09544070251334165

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

2013-05-01

417

OA

AI

D

Deep Jariwala

V

Vinod K. Sangwan

D

Dattatray J. Late

J

James E. Johns

V

Vinayak P. Dravid

T

Tobin J. Marks

L

Lincoln J. Lauhon

M

Mark C. Hersam *

DOI：10.1063/1.4803920

Original

Original request for help

Save

Abstract

En 中文

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm(2)/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. (C) 2013 AIP Publishing LLC.

Keywords:

VALLEY POLARIZATION

SCATTERING MOBILITY

ELECTRON-MOBILITY

SILICON

PHOTOTRANSISTORS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

Abstract

Journal

Organization

Cited Papers

Citing Papers