Bare‐Die Antiferromagnetic Computing

Yu Liu

doi:10.1002/adma.75126

Bare‐Die Antiferromagnetic Computing

2026-09-27

0

OA

AI

DOI：10.1002/adma.75126

Original

Save

View PDF

Abstract

En 中文

ABSTRACT Semiconductor electronic devices are increasingly constrained by fundamental quantum tunneling effects and charge‐based mechanisms, which severely limit further miniaturization, write‐speed scaling, and environmental robustness of silicon‐based technologies. These limitations are particularly prohibitive for deep‐space exploration, where extreme temperatures, ultra‐strong magnetic fields, and intense radiation rapidly incapacitate conventional electronics without massive shielding. Here, we present an intrinsically resilient, strain‐mediated antiferromagnetic MnIr/PMN‐PT edge processor that operates reliably as a bare die under temperatures up to 500 K, magnetic fields of 55 T, and radiation doses of 1.5 Mrad. By exploiting an Input‐Modulated In Situ Self‐Refreshing Encoding mechanism, the device performs nonlinear feature extraction and classification directly from raw analog signals, enabling an analog computing architecture that requires no time‐frequency transformation. This architecture achieves 99.8% accuracy in speech recognition without digital preprocessing and 100% accuracy in astronaut visual object recognition. Furthermore, an all‐hardware integrated drone vision system demonstrates real‐time in situ command execution and autonomous navigation, delivering a terahertz‐level response frequency and an ultra‐low energy consumption of approximately 0.2 fJ per operation. This work expands the functional scope of antiferromagnetic devices beyond memory and logic, establishing them as a promising materials platform for energy‐efficient physical computing and autonomous intelligence in extreme environments.

Bare‐Die Antiferromagnetic Computing

Abstract

Journal

Organization

Cited Papers