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Beyond Near-Field Confinement: Plasmon-Boosted Cooperative Emission in InGaN/GaN Multiple-Quantum-Well Light Emitters
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DOI：10.1021/acsphotonics.6c00413.png)
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Abstract
En 中文
InGaN/GaN quantum wells suffer from intrinsically slow radiative recombination caused by strong internal polarization fields. Surface plasmonic coupling has been explored as a means to overcome this limitation, but conventional descriptions confine its effect to the immediate vicinity of the metal interface. Here we report a uniform shortening of radiative lifetime across green-emitting InGaN/GaN multiple-quantum-well structures upon coupling to an Ag interface. Time-resolved photoluminescence measurements demonstrate that the emission acceleration extends throughout the entire active region, well beyond the expected range of plasmonic near-field interaction. We show that this behavior cannot be explained by energy transport under identical experimental constraints. Instead, the observations are consistently accounted for by cooperative emission coupling between quantum wells. In this framework, local plasmon-induced Purcell enhancement modifies pre-existing cooperative emission modes, resulting in global acceleration of radiative decay. The emission rate follows a multiplicative scaling with the Purcell factor and the number of cooperatively coupled layers. This mechanism resolves the trade-off between emission speed and active volume and establishes design principles for ultrafast photonic devices with thick active regions.
Keywords:
Analytical apparatus
Chemical structure
Interfaces
Plasmonics
Plasmons
InGaN/GaN multiple quantum wells
surface plasmons
Purcell effect
cooperative emission
time-resolved photoluminescence
visible light communication
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6.7
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5.6K
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2.5W
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Cited Papers