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Bias-selectable dual-band mid-wavelength infrared photodetector based on bandgap-engineered InAs/GaSb superlattices

delete2026-06-18
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PRE
AI
J
Jixing Yang
J
Jing Yu *
Z
Zekun Chen
Y
Yongao Zhao
L
Lidan Lu
W
Weiqiang Chen
Y
Yanming Song
Y
Yuegang Fu *
L
Lianqing Zhu *
DOI：10.1016/j.optmat.2026.118263delete
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Abstract

Abstract

En 中文
• A bias-selectable dual-band MWIR photodetector is demonstrated using InAs/GaSb T2SLs. • Selective carrier collection is achieved via an M-structure unipolar barrier. • Pseudomorphic growth with atomically smooth surface (RMS = 0.28 nm) is confirmed. • Peak detectivities of 1.88 × 1012 cm Hz1/2 W−1 and 3.90 × 1011 cm Hz1/2 W−1 are achieved.

Journal

Optical Materials cover
Optical Materials
IF:
4.2
Papers:
1.7W
Citations:
3.4W

Organization

C
Changchun University of Science and Technology
Scholars:
1.4K
Papers: 462
Citations: 4.3K
B
beijing information science and technology university
Scholars:
369
Papers: 153
Citations: 0
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