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Bias-selectable dual-band mid-wavelength infrared photodetector based on bandgap-engineered InAs/GaSb superlattices
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J
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DOI：10.1016/j.optmat.2026.118263.png)
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Abstract
En 中文
• A bias-selectable dual-band MWIR photodetector is demonstrated using InAs/GaSb T2SLs. • Selective carrier collection is achieved via an M-structure unipolar barrier. • Pseudomorphic growth with atomically smooth surface (RMS = 0.28 nm) is confirmed. • Peak detectivities of 1.88 × 1012 cm Hz1/2 W−1 and 3.90 × 1011 cm Hz1/2 W−1 are achieved.
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