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Boosting Ag2S Solar Cell Efficiency by Back Interface Engineering
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DOI：10.1002/adfm.202526960.png)
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Abstract
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Silver sulfide (Ag2S) is an excellent photovoltaic material due to its optimal elemental composition and strong chemical and device stability. A critical factor limiting the further efficiency enhancement of Ag2S solar cells lies in the severe carrier recombination losses at the Ag2S/ITO back interface, primarily attributed to poor electrical contact and energy barrier mismatch between the absorption layer and ITO electrode. Herein, we propose a novel back-interface optimization strategy by introducing a Zn-doped SnO2 (SnO2:Zn) electron transport layer (ETL) at the rear contact of Ag2S. The SnO2:Zn ETL demonstrates dual-functionality in Ag2S devices: reducing interfacial energy barriers and inducing a transition in the preferred crystalline orientation of the absorption layer from (012) to Furthermore, the formed ZnSn acceptor defect and VO vacancy defects within SnO2:Zn synergistically decrease electron concentration, raise the work function, and thus establish a favorable back-surface field. These coordinated mechanisms collectively improve charge carrier extraction and suppress non-radiative carrier recombination. Consequently, the power conversion efficiency of SnO2:Zn incorporated Ag2S devices is elevated from 1.91% to 2.76%. This innovative strategy provides novel insights into interface engineering for Ag2S thin-film solar cells.
Keywords:
Ag2S solar cells
crystal preferred orientation
energy level matching
interface carrier recombination
interface engineering
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19
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3.5W
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32.1W
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