arrow
Return

Bulk rectification effect in a polar semiconductor

delete2017-03-06
delete187
delete
OA
AI
T
Toshiya Ideue *
K
Keita Hamamoto
S
Shota Koshikawa
M
Motohiko Ezawa
S
Sunao Shimizu
Y
Y. Kaneko
Y
Y. Tokura
N
Naoto Nagaosa
Y
Yoshihiro Iwasa
DOI:10.1038/NPHYS4056delete
deleteOriginal
deleteShare
deleteSave
View PDF
Abstract

Abstract

En 中文
Noncentrosymmetric conductors are an interesting material platform, with rich spintronic functionalities(1,2) and exotic superconducting properties(3,4) typically produced in polar systems with Rashba-type spin-orbit interactions(5). Polar conductors should also exhibit inherent nonreciprocal transport(6-8), in which the rightward and leftward currents differ from each other. But such a rectification is diffcult to achieve in bulk materials because, unlike the translationally asymmetric p-n junctions, bulk materials are translationally symmetric, making this phenomenon highly nontrivial. Here we report a bulk rectification effect in a three-dimensional Rashba-type polar semiconductor BiTeBr. Experimentally observed nonreciprocal electric signals are quantitatively explained by theoretical calculations based on the Boltzmann equation considering the giant Rashba spin-orbit coupling. The present result offers a microscopic understanding of the bulk rectification effect intrinsic to polar conductors as well as a simple electrical means to estimate the spin-orbit parameter in a variety of noncentrosymmetric systems.
Keywords:
ELECTRICAL MAGNETOCHIRAL ANISOTROPY
SPIN POLARIZATION
SURFACE
STATE
AI Summary

AI Summary

Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

Journal

Nature Physics cover
Nature Physics
IF:
18.4
Papers:
6.7K
Citations:
5.7W

Organization

U
University of Tokyo
Scholars:
7.1W
Papers: 6.5W
Citations: 2.2K
R
riken
Scholars:
2.2W
Papers: 1.9W
Citations: 24