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Carrier-Induced Mode Redistribution Enabling Scalable Single-Mode Lasing in Ultra-Large-Area Photonic-Crystal Surface-Emitting Lasers
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DOI：10.1109/jstqe.2026.3703418.png)
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Abstract
En 中文
Photonic-crystal surface-emitting lasers (PCSELs) are attracting attention as next-generation high-power light sources for a variety of applications owing to their capability for coherent lasing oscillation over ultra-large emission areas. To maintain stable single-mode lasing in ultra-large-area PCSELs far above the lasing threshold, it is essential to understand how the oscillation modes evolve in time and space via the interaction between carriers and photons. In this paper, we perform a comprehensive numerical analysis of the lasing characteristics of ultra-large-area (3∼10-mm) PCSELs considering carrier-photon interactions, focusing specifically on the physics that allows single-mode oscillation over an ultra-large area even under high current injection. We reveal that, owing to carrier-induced refractive index changes and the resultant weak mode-gap effect, the initial unimodal photon distributions concentrated at the center of the gain region inside large-area PCSELs are spontaneously altered. When lasing oscillation occurs at a band-edge mode with an appropriate band curvature, the photon distribution becomes increasingly uniform as the injection current increases, resembling the distribution of the injection current. Such mode redistribution (or delocalization) suppresses spatial hole burning and is advantageous for maintaining single-mode oscillation even at high current injection. In addition, by tailoring the injection current distribution inside the device, we can flexibly change the emission profile to, for example, Gaussian-like distributions. Our findings provide deeper insight into the lasing characteristics of ultra-large-area single-mode PCSELs, and offer an important guideline for the experimental demonstration of kW-class single-mode oscillation in the future.
Keywords:
Photonic crystals
photonic-crystal surface-emitting lasers
semiconductor lasers
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