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Characterization of runaway electron impact on instrumented sacrificial limiters on DIII-D
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DOI：10.1088/1741-4326/ae5c1f.png)
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Abstract
En 中文
Instrumented sacrificial limiter heads, both domed (proud) and flat (flush) are used in DIII-D runaway electron (RE) wall strikes to study the wall impact dynamics with high spatial and time resolution. The approximate structure of the RE wetted area and heating depth on the domed limiter heads were predicted qualitatively using orbit-tracking simulations, although a strong left–right asymmetry (about the magnetic field direction) was not captured well by the simulations. It is hypothesized that this difference is perhaps due to the local 3D magnetic field perturbation of the dome limiter head. The average kinetic energy K and pitch angle θ of REs striking the limiter head were estimated from the spatial distribution of local HXR emission and were estimated to be roughly K 4 MeV and θ 0.2 rad. These values are roughly consistent with in-plasma values estimated before the loss event, indicating that RE kinetic energy and pitch angle are not drastically altered when transporting to the wall. Large shot–shot variations (1–10 kJ) in energy deposition into the limiter head were observed and were explained by shot–shot variations in locked magneto-hydrodynamics mode toroidal phase. For the largest deposited energies (10 kJ), graphite material failure and explosive dust release was observed, and the depth of material failure at higher energy deposition was successfully reproduced using modelling of volumetric energy deposition and brittle failure. The presence of energetic (keV) level ion impact during the RE wall strike was confirmed by three different surface analysis techniques. The ratio of energetic ion to RE flux appears to be larger on flat surfaces within the RE wetted area, although the energetic ion flux and total energy flux due to energetic ions have not yet been quantified.
Keywords:
runaway electrons
sacrificial limiters
DIII-D
energy deposition
magnetic field perturbation
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