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Chemical Control of Space Charge Barriers and Grain Boundary Resistances in Polycrystalline Ionic Conductors
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DOI：10.1002/adfm.77635.png)
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Abstract
En 中文
Grain boundaries (GBs) are unavoidable extended defects in polycrystalline materials that often lead to charge-carrier blocking. Their presence, in turn, depresses device performance and/or accelerates degradation. Attempts to systematically identify the source or control these barriers remain scarce. Here, we investigate the ability to locally engineer GB chemistry and net charge in the model oxygen-ion solid electrolyte Gd-doped CeO2 via an infiltration protocol that enables selective doping of the GBs. In so doing, we demonstrate unprecedented control over GB resistance via control of local space charge fields, leading to reduction or enhancement of many orders of magnitude in GB resistance. Our advances lay the foundation for extending GB engineering to a wide range of electroceramic applications, from energy storage/conversion to microelectronics and other novel applications requiring controlled GB barriers for enhanced performance.
Keywords:
electroceramics
polycrystalline
solid electrolyte
space charge engineering
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