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Co-silanization engineering to construct molecular diffusion barrier for copper metallization on silicon
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DOI：10.1016/j.jtice.2025.106614.png)
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Abstract
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• Organosilanes are promising candidates to construct molecule-level diffusion barrier for next-generation IC technology. • Diffusion barrier based on single molecule suffers uncontrolled self-assembling problem. • Co-silanization technology based on two organosilanes are proposed to overcome the uncontrolled molecular assembling problems. • The co-silanized molecular nanolayer exhibits better barrier efficacy against the Cu diffusion as compared to the mono-silanized nanolayer. • The better diffusion barrier efficacy is attributed to the co-assembly of a well-oriented and organized network structure.
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