Colorimetric Vertically Stacked Sensor Array Enabled by Solution-Processed Oxide Semiconductors for Volatile Organic Compound Detection

H. Lee

doi:10.1021/acsaelm.6c00003

Colorimetric Vertically Stacked Sensor Array Enabled by Solution-Processed Oxide Semiconductors for Volatile Organic Compound Detection

2026-02-25

0

PRE

AI

DOI：10.1021/acsaelm.6c00003

Original

Original request for help

Save

Abstract

En 中文

This work demonstrates the synthesis of spin-on oxide semiconductors via an ultraviolet (UV)-assisted annealing process using metal–organic precursors with β-diketone ligands. This process promotes the decomposition and subsequent condensation while preserving a high density of hydrogen- and oxygen-related donor species. These donors effectively supply free electrons and fill shallow trap states near the conduction band minimum (CBM), resulting in enhanced carrier mobility and on-current. A peak field-effect mobility of 89 cm2/V·s, an on-current (Ion) of 26.42 μA, and an Ion/Ioff ratio of 108 were achieved in bottom-gated transistors using a SiO2 gate dielectric. Moreover, the high density of trap states near the CBM broadens the spectral detection range from UV to visible light, yielding a high responsivity of 8,900 A/W and a detectivity of 1.26 × 1014 Jones. Leveraging this broadband photoresponsivity, we further developed a vertically stacked sensor platform for the detection of volatile organic compounds (VOCs). These results highlight UV-assisted solution processing as a powerful strategy to realize high-performance oxide electronics and multifunctional sensor platforms.

Keywords:

Oxides

Sensors

Solution processing

Transistors

Volatile organic compounds

solution process

oxide semiconductor

low temperature process

gas detection

Förster resonance energy transfer

volatile organic compounds

Colorimetric Vertically Stacked Sensor Array Enabled by Solution-Processed Oxide Semiconductors for Volatile Organic Compound Detection

Abstract

Journal

Organization