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Comparative Study of CVD-Grown Graphene using Methane and Benzene as Precursors
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DOI：10.1007/s11664-026-12835-9.png)
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Abstract
En 中文
The scalable synthesis of high-quality monolayer graphene is critical for several applications in electronics. In this study, we investigate chemical vapor deposition (CVD) growth of graphene on copper foils using benzene as a liquid carbon precursor and compare it with methane-assisted growth. Benzene, with its aromatic ring structure, provides a lower decomposition barrier and a carbon supply closely aligned with the hexagonal graphene lattice, enabling continuous, defect-minimized monolayers at significantly lower temperatures 300-450 degrees C compared to methane (similar to 800-1000 degrees C). Systematic variation of growth temperature reveals that benzene-grown graphene maintains structural integrity and uniformity at temperatures down to 450 degrees C, whereas further reduction to 350 degrees C increases defect density and reduces coverage. These results demonstrate that benzene-assisted CVD is a promising route for low-temperature, energy-efficient, and scalable graphene synthesis, providing high-quality graphene suitable for practical applications. The study also highlights the importance of precursor delivery to mitigate challenges such as condensation, polymerization, and toxicity, offering insights into precursor-dependent growth mechanisms.
Keywords:
Graphene
CVD
benzene
methane
low-temperature growth
Raman spectroscopy
SEM (scanning electron microscope)
monolayer graphene
Journal
J
IF:
2.5
Papers:
485
Citations:
0
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Cited Papers