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Complex structural phase transition in a defect-populated two-dimensional system

delete2001-11-01
delete14
PRE
AI
A
Anatoli V. Melechko
M
M. V. Simkin
N
Nagiza F. Samatova
J
Jens Braun
E
E. W. Plummer
DOI：10.1103/PhysRevB.64.235424delete
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Abstract

Abstract

En 中文
A complex phase transition in Sri/Ge(111) and similar systems can be decomposed into two intertwined phase transitions: a structural symmetry lowering (root3 x root3) double left right arrow (3x3) transition and a disorder-order transition in the defect distribution, We present two phenomenological models that describe these transitions and their interrelation. These models allow us to understand the formation of domains and domain walls at low temperatures, defect-induced density waves above the structural transition temperature, and ordering of the defects caused by lattice-mediated defect-defect interactions. The models predict a destruction of the pure structural transition when impurities are introduced into the system, a shift in the structural crossover temperature with impurity density. and a dependence of the (3x3) lattice structure on the specific defect alignment.
Keywords:
CHARGE-DENSITY-WAVE
SURFACE PHASE
BAND-STRUCTURE
SN/GE(111)
PB/GE(111)
SEMICONDUCTORS
DRIVEN
STM
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Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

Journal

Physical Review B cover
Physical Review B
IF:
3.7
Papers:
15.4W
Citations:
41.0W

Organization

No organization information available