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Continuous Class-B/J Power Amplifier Using a Nonlinear Embedding Technique
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DOI：10.1109/TCSII.2016.2633300.png)
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Abstract
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This brief explores the design space for realizable solution of a broadband class-B/J continuous mode of power amplifier (PA). The PA is initially designed at the current-source reference plane with the correct voltage and current waveforms. The intrinsic impedances are then projected to the package reference plane using the model-based nonlinear-embedding technique. An insight is provided into engineering the extrinsic harmonic impedance to rotate clockwise on the Smith chart to be able to match it using a Foster circuit. It is concluded that decreasing the empirical parameter a of a general class-B/J voltage equation with increasing frequency leads to a clockwise trajectory on the Smith chart of the second harmonic at the package plane. In order to validate the advantage of this analysis, the PA is implemented using a 15 W gallium nitride high electron mobility transistor in the frequency range of 1.3 to 2.4 GHz and drain efficiency between 63% and 72% in measurement was achieved over the entire bandwidth.
Keywords:
Broadband
class-J
continuous mode
embedding
Foster
gallium nitride (GaN)
high electron mobility transistor (HEMT)
power amplifier (PA)
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