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Controllable semiconductor flexoelectricity by interface engineering
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DOI：10.1063/5.0097238.png)
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Abstract
En 中文
Flexoelectricity of semiconductors usually exhibits large flexoelectric coefficients due to their significantly enhanced surface piezoelectricity caused by surface symmetry breaking. In this Letter, we reported a general paradigm to tune the semiconductor flexoelectricity through interface engineering. We selected Nb-SrTiO3 (Nb-STO) single crystals as the targets and tuned their surface piezoelectricity through depositing TiO2-terminated and SrO-terminated ultra-thin BaTiO3 (BTO) films. The results suggested that the deposition of TiO2-terminated and SrO-terminated ultra-thin BaTiO3 films to Nb-STO can induce a downward and upward out-of-plane surface polarization, respectively, thereby significantly increasing/decreasing the apparent flexoelectric coefficients of Nb-STO single crystals. Our work proves the feasibility of interface engineering in the application of flexoelectricity and also provides a possible route to achieve the large apparent flexoelectricity of semiconductor materials. Published under an exclusive license by AIP Publishing.
Keywords:
SURFACE
SRTIO3
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W
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