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Controlling temporal plasma dynamics for growing highly c-axis-oriented GaN thin films on Si (111) substrates through pulsed DC magnetron sputtering

delete2026-06-12
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PRE
AI
W
Wei-Sheng Liu *
L
Li-Cheng Huang
D
Deveshwar Sasikumar
K
Kuo-Jui Hu
J
Jiun-Yi Ye
B
Balaji Gururajan
DOI：10.1016/j.surfcoat.2026.133687delete
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Abstract

Abstract

En 中文
• High-quality (002) GaN films grown on Si(111) by pulsed DC sputtering. • Duty cycle modulation controls ion energy and adatom mobility. • Achieved highly c-axis-oriented GaN with a (002) θ–2θ XRD peak FWHM of 0.21°. • Films show intense UV emission (3.34 eV) and smooth morphology. • Scalable PVD route for integrating GaN with silicon technology.

Journal

Surface and Coatings Technology cover
Surface and Coatings Technology
IF:
6.1
Papers:
2.8W
Citations:
7.1W

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