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Correlating aluminum layer deposition rates, Josephson junction microstructure, and superconducting qubits' performance
DOI:10.1016/j.actamat.2024.120631.png)
Abstract
En 中文
An ultra-thin aluminum oxide layer is a key component for Josephson junctions (JJ) in superconducting quantum bits (qubits). This layer serves as a barrier layer for Cooper pairs tunneling between the superconducting electrodes and significantly influences the overall performance of the junction. In this study, we investigate the impact of aluminum deposition rates on the microstructure and chemical variation of the aluminum oxide layer, as well as the device's yields and qubits' lifetimes. Surprisingly, although the oxide layer roughness and thickness variation improve noticeably with an increasing Al deposition rate from 0.5 & Aring;/s to 5 & Aring;/s, the qubit's coherence time is almost unchanged. We attribute this to the fact that Cooper pairs tunnel only through the thinnest region of the barrier. Additionally, we revealed a stress-induced grain boundary sliding short-circuit failure mechanism in the JJ. Our discovery provides a vital understanding of oxide microstructure and JJ functionality, which are critical for improving the coherence time of superconducting qubits.
Keywords:
Superconducting qubits
Josephson junction
Oxide tunnel barrier
Transmission electron microscopy
Grain boundary
Electron energy-loss spectroscopy
Coherence time
Journal
IF:
9.3
Papers:
2.0W
Citations:
12.9W

