Correlation between electrical and structural changes in amorphous ITO films

Seonghoon Han

doi:10.1016/j.vacuum.2025.114441

Correlation between electrical and structural changes in amorphous ITO films

2025-06-12

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DOI：10.1016/j.vacuum.2025.114441

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• Amorphous ITO film exhibits a resistance maximum (Rmax) at approximately 180 °C during annealing. • In-situ XRD reveals crystallization onest coincides with the sharp resistance increase near Rmax. • In-situ XPS confirms no chemical state changes in amorphous ITO during annealing. • Hall measurements show minium mobility near 175 °C due to grain boundary scattering in crystallized ITO. • Structural changes during crystallization primarily govern electrical properties of amorphous ITO films.

Correlation between electrical and structural changes in amorphous ITO films

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