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Correlation-length effects in a rotating semiconductor photo-thermoelastic sphere via the nonlocal modified GN-III model
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DOI：10.1016/j.jppr.2026.05.002.png)
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Abstract
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This study presents a novel nonlocal photo-thermoelastic framework that combines the Moore-Gibson-Thompson (MGT) heat conduction equation with an enhanced Green-Naghdi Type III (GN-III) model and the Guyer-Krumhansl (GK) nonlocal formulation. By integrating thermal relaxation, rate-dependent conductivity, and spatial nonlocality through a meaningful correlation length lq (representing the phonon/electron mean free path), the model addresses the unphysical infinite thermal wave speeds of classical Fourier theory, ensuring finite and causal propagation. The framework is employed to investigate the dynamics of thermal, elastic, and carrier density in a rotating semiconductor sphere subjected to thermal shock, uniform rotation, and an external magnetic field. Governing equations are numerically solved in the Laplace domain, leveraging L'Hôpital's rule to manage spherical singularities. Noteworthy findings indicate that nonlocality significantly alters the mechanical response, causing a sign reversal in central displacement from compressive to expansive and achieving a 977% increase in carrier recombination at the sphere's center—effects missing in local models. The full nonlocal MGT model predicts 20%–30% lower values for temperature, displacement, stress, and carrier density compared to classical photo-thermoelasticity, with contributions from thermal relaxation, rate-dependent conductivity, and nonlocal spatial averaging. The study provides a robust tool for optimizing high-performance semiconductor devices, such as rotating MEMS gyroscopes and laser diodes, where accurate predictions of photo-induced effects are essential.
Keywords:
Photo-thermoelastic coupling
Carrier density dynamics
Phase-lag effects
Thermal wave propagation
Magnetic field effects
Rotating semiconductor
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6.3
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336
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1.7K
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