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Critical review of electrical transport properties of p-type CuInSe2 and CuGaSe2
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DOI：10.1080/10408436.2026.2655133.png)
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Abstract
En 中文
The electrical transport data on p-type samples of CuInSe2 and CuGaSe2 are restudied taking into account the effects of the non-parabolicity of the valence band and hopping conduction in the acceptor band to identify hopping conduction mechanisms in each of the samples. The significant effects of hopping conduction are revealed not only for the electrical conductivity and the Hall coefficient but also for the Seebeck coefficient. It is revealed that the primitive two-band model used in the previous studies is apt to overestimate the impurity concentrations. The non-parabolicity is found to be much larger in CuGaSe2 than in CuInSe2.
Keywords:
Chalcopyrite
effective mass
non-parabolicity
mobility
hopping conduction
impurity band
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8.9
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380
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3.2K
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