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Crystallographic-Orientation-Independent Field-Free Deterministic Magnetization Switching in Perpendicularly Aligned WTe2/Fe3GeTe2/WTe2 Heterostructures
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DOI：10.1002/sstr.202500607.png)
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Abstract
En 中文
Spintronic devices utilizing spin-orbit torque mechanisms still face challenges including high drive currents, the necessity of external magnetic fields, and sensitivity to crystallographic orientation. Here, we demonstrate field-free deterministic magnetization switching in perpendicularly magnetized Fe3GeTe2 (FGT) through WTe2/FGT/WTe2 van der Waals heterostructures. By exploiting the strong charge-to-spin conversion of WTe2—a type-II Weyl semimetal—the trilayer design enables out-of-plane antidamping torques generation regardless of current direction along the a or b crystallographic axis. In perpendicularly aligned devices, polarity-dependent magnetization switching is achieved without external fields at 150 K, with a threshold current of approximately ±5–7 mA. In contrast, parallelly aligned devices exhibit unidirectional switching from downward to upward magnetization states, independent of current polarity. Such crystallographic-orientation-independent switching eliminates the need for precise crystallographic measurements during fabrication, thereby significantly simplifying device integration. This article provides a pathway toward scalable and energy-efficient spintronic devices for memory and neuromorphic computing applications.
Keywords:
deterministic magnetization switching
independent of crystallographic orientation
spintronic device
type-II Weyl semimetal
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