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Current-controlled antiferromagnetic memory

delete2023-06-19
delete5
PRE
AI
P
Pedram Khalili Amiri *
F
Francesca Garescì *
G
Giovanni Finocchio *
DOI：10.1038/s41928-023-00982-4delete
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Abstract

Abstract

En 中文
A magnetic random-access memory device that has an antiferromagnetic material as its storage element can be electrically read using ferromagnetic tunnelling.
Keywords:
MAGNETORESISTANCE

Journal

Nature Electronics cover
Nature Electronics
IF:
40.9
Papers:
1.7K
Citations:
2.1W

Organization

U
University of Messina
Scholars:
1.5W
Papers: 1.1W
Citations: 1.1W
N
Northwestern University
Scholars:
6.1W
Papers: 5.3W
Citations: 3.9K