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Decrease in switching voltage fluctuation of Pt/NiOx/Pt structure by process control
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DOI：10.1063/1.2755712.png)
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Abstract
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Resistance change random access memory devices using NiOx films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory. The only critical failure of a NiOx film is to write wrong information due to large fluctuations of switching voltages during successive resistance switching operations. The authors show that failure-free NiOx film can be grown directly on Pt electrode just by process control. Intensive analyses show that the superior resistance switching behaviors of their simple Pt/NiOx/Pt structure may result from a very thin Ni-Pt layer self-formed at the bottom interface during deposition of NiOx. (C) 2007 American Institute of Physics.
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