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Delta Doping in Silicon by Argon Ion Preimplantation and Nanosecond Laser Annealing
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DOI：10.1021/acsaelm.4c02133.png)
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Abstract
En 中文
Delta doping (delta-doping) has extensive applications in advanced metal oxide semiconductor field effect transistors, quantum devices, and deep ultraviolet (DUV) photodetectors. In this work, we demonstrate a novel method for high-concentration phosphorus delta-doping in silicon using pulsed laser annealing assisted with argon preimplantation. The delta-doping layer has a peak phosphorus concentration of 1.44 x 1020 cm-3. Low-temperature Hall measurements reveal that the delta-doping layer is in a metallic state and exhibits a weak localization phenomenon, which implies the formation of a two-dimensional electron gas. As a demonstration, a highly sensitive deep UV photodetector is fabricated by forming an n-type delta-doping layer on a p-type Si substrate. The photoresponsivity of our delta doping PN junction photodiodes is 0.124 A/W, more than 2 times higher than that of the commercial photodiode. This finding offers a promising route for the realization of a highly doped delta-doping layer in silicon, with potential applications in a variety of electronic and optoelectronic devices.
Keywords:
delta doping
argon implantation
laser annealing
metal-to-insulator transition
weak localization phenomenon
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