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Demonstration of Diamond (100) Inversion channel MOSFETs

delete2026-07-24
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PRE
AI
A
Akihiro Koike
A
Aito Nakagawa
T
Tsubasa Yoshimoto
K
Kazuki Kobayashi
K
Kan Hayashi
K
Kimiyoshi Ichikawa
T
Takao Inokuma
S
Satoshi Yamasaki
N
Norio Tokuda
T
Tsubasa Matsumoto *
DOI：10.1016/j.diamond.2026.114010delete
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Abstract

Abstract

En 中文
• Diamond (100) inversion-channel MOSFET operation was demonstrated by surface reconstruction prior to wet annealing. • The fabricated MOSFET exhibited distinct normally-off characteristics with well-defined linear and saturation regions. • The electrical characteristics strongly suggested successful operation based on inversion-layer formation.
Keywords:
Diamond
MOSFET
Inversion
(100)
Normally-off

Journal

Diamond and Related Materials cover
Diamond and Related Materials
IF:
5.1
Papers:
2.1K
Citations:
2.4W

Organization

K
Kanazawa University
Scholars:
1.2W
Papers: 8.6K
Citations: 7.6K
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