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Dense self-assembly on sparse chemical patterns: Rectifying and multiplying lithographic patterns using block copolymers
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DOI：10.1002/adma.200800826.png)
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Abstract
En 中文
A lithography-friendly self-assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half-pitch on a thin resist pattern at twice the period (left figure). This directed self-assembly process dramatically heals defects and reduces feature size variation of the ill-defined resist patterns.
Keywords:
LONG-RANGE ORDER
NANOSTRUCTURES
GRAPHOEPITAXY
DIMENSIONS
TEMPLATES
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