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Design and characterization of a 28 nm CMOS charge sensitive amplifier for harsh radiation environments
10.1016/j.nima.2025.171177
2025-11-01
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Abstract
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This paper discusses the design and the characterization of a charge sensitive amplifier (CSA) for the readout of hybrid pixels detectors in harsh radiation environments. The CSA, designed in a 28 nm CMOS technology, includes a feedback network for detector leakage compensation and requires around 4 mu A for standard operation at a nominal voltage of 0.9 V. Test results show that the CSA is fully functional in the presence of a detector emulating leakage current up to 10 nA. The measured equivalent noise charge is close to 70 electrons r.m.s. for a sensor emulating capacitance of 50 fF, in the default bias settings. The Time-over-Threshold (ToT) performance of the CSA has also been investigated, with a maximum integral non-linearity of 3.8% detected in the ToT characteristic. The paper also reports the main performance parameters of the CSA exposed to X-rays, for total ionizing doses up to 1 Grad(SiO2).
Keywords:
Charge sensitive amplifier
CMOS Front-end circuits
TID effects
Harsh radiation environments
Equivalent noise charge
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Journal
N
IF:
1.4
Papers: 282
・
Citations: 0
Researchers
G
Gaioni, L.
H-index:
0
Papers: 1
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Citations: 0
G
Galliani, A.
H-index:
0
Papers: 1
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Citations: 0
R
Ratti, L.
H-index:
0
Papers: 5
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Citations: 0
R
Re, V.
H-index:
0
Papers: 1
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Citations: 0
T
Traversi, G.
H-index:
0
Papers: 1
・
Citations: 0
Organization
U
university of bergamo
Scholars:
95
Papers: 60
・
Citations: 0
U
university of pavia
Scholars:
2.0W
Papers: 1.6W
・
Citations: 8
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