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Design of a G-Band Detector Based on Zero-Bias Schottky Diodes
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DOI：10.1587/elex.23.20250742.png)
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Abstract
En 中文
This paper proposes a high-sensitivity G-band detector module based on zero-bias Schottky diodes for direct detection radiometer receivers. To achieve a compact inline configuration with superior performance, the design features a novel U-shaped reducedheight waveguide transition, a cascaded CMRC low-pass filter, and an optimized DC grounding structure. Following rigorous EM-circuit cosimulations, the fabricated module was experimentally characterized. Measurement results demonstrate that the detector achieves a peak voltage responsivity of 9400 V/W in the small-signal regime. Specifically, at the target center frequency of 166 GHz, a high responsivity of approximately 6000 V/W is realized. The detector also exhibits excellent linearity (R-2 > 0.998) and flatness, validating its suitability for high-performance millimeter-wave sensing applications.
Keywords:
G-band
detector
zero-bias Schottky diodes
CMRC
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0.7
Papers:
204
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1.6K
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